2006. 2. 15 1/2 semiconductor technical data KDR735T schottky barrier type diode revision no : 0 low current rectification and high speed switching. features low reverse current : i r =0.1 a(typ.) high reliability. small package : tsq. maximum rating (ta=25 ) dim millimeters a b d e tsq 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.16 0.05 0.00-0.10 0.25+0.3/-0.15 c f g h i j k 0.60 a f d b e c k h i 2 14 3 + _ + _ + _ + _ + _ + 0.1 _ 0.55 + 0.1 _ g i d1 d2 12 4 3 1. d1 anode 2. d2 anode 3. d2 cathode 4. d1 cathode * unit rating. (total rating = unit rating 1.5) ** mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. electrical characteristics (ta=25 ) r 3 type name lot no. 12 3 4 marking characteristic symbol rating unit reverse voltage v r 30 v average forward current i o * 200 ma surge current (10ms) i fsm * 1 a power dissipation p d ** 900 mw junction temperature t j 125 storage temperature range t stg -40 125 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =200ma - - 0.60 v reverse current i r v r =10v - - 1.0 a
2006. 2. 15 2/2 KDR735T revision no : 0 forward current i (a) f forward voltage v (v) f i - v f f 0 power dissipation p (mw) -40 ambient temperature ta ( c) p - ta i - v r reverse voltage v (v) 0 r 10n reverse current i (a) rr 100n 100 1m 10 1 30 20 10 ta=125 c ta=75 c ta=25 c ta=-25 c reverse voltage v (v) r r t c - v total capacitance c (pf) t f=1mhz 25 50 75 100 125 150 40 80 120 160 200 240 mounted on a glass epoxy circuit board of 20 20mm, pad dimension 4 4mm. 0 100 0.1 ta=125 c 0.4 0.3 0.2 0.5 0.6 0.7 1 10 1m 10m 100m 1 0 1 10 100 10 20 30 ta=25 c ta=75 c ta=25 c ta=-25 c
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